Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1696-1699

  Congedo, G ^a   Spiga, S ^a   Lamagna, L ^a   Lamperti, A ^a   Lebedinskii, Yu ^c   Matveyev, Yu ^c   Zenkevich, A ^c   Chernykh, P ^c,d   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Atomic layer deposition; High dielectrics; Lanthanum aluminate

Indexed keywords

ELECTRICAL PROPERTY; HIGH DIELECTRIC CONSTANTS; HIGH-TEMPERATURE ANNEALING; LANTHANUM ALUMINATE; LARGE BAND; POST-DEPOSITION; SI DIFFUSION; SI(1 0 0);

ALUMINOSILICATES; AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; ATOMS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; LANTHANUM; LANTHANUM ALLOYS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILMS;

AMORPHOUS FILMS;

EID: 67349247057     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.072     Document Type: Article

References (19)

1. M. Fanciulli, G. Scarel (Eds.), Top. Appl. Phys. 106 (2007) 1.
2. Robertson J. J. Appl. Phys. 104 (2008) 124111
3. Kim S.Y., Kwon H., Jo S.J., Ha J.S., Park W.T., Kang D.K., and Kim B.-H. Appl. Phys. Lett. 90 (2007) 103104
4. Lin S.H., Chin A., Yeh F.S., and McAlister S.P. IEDM Tech. Dig. (2008) 843
5. Van Elshocht S., Adelmann C., Conard T., Delabie A., Franquet A., Nyns L., Richard O., Lehnen P., Swerts J., and De Gendt S. J. Vac. Sci. Technol. A 26 4 (2008) 724
6. Gaskell J.M., Jones A.C., Aspinall H.C., Przybylak S., Chalker P.R., Black K., Davies H.O., Taechakumput P., Taylor S., and Critchlow G.W. J. Mater. Chem. 16 (2006) 3854
7. Tsoutsou D., Scarel G., Debernardi A., Capelli S.C., Volkos S.N., Lamagna L., Schamm S., Coulon P.E., and Fanciulli M. Microelectr. Eng. 85 (2008) 2411
8. RUMP software, www.genplot.com.
9. Schamm S., and Zanchi G. Ultramicroscopy 96 (2003) 559
10. Kim C.Y., Ko D.-H., Jang M.H., Chung K.B., Cho M.-H., and Jeon H.T. Appl. Phys. Lett. 92 (2008) 012922
11. Hayward S.A., Morrison F.D., Redfern S.A.T., Salje E.K.H., Scott J.F., Knight K.S., Tarantino S., Glazer A.M., Shuvaeva V., Daniel P., Zhang M., and Carpenter M.A. Phys. Rev. B 72 (2005) 054110
12. Cicerrella E., Freeouf J.L., Edge L.F., Schlom D.G., Heeg T., Schubert J., and Chambers S.A. J. Vac. Sci. Technol. A 23 (2005) 1676
13. Hill W.A., and Coleman C.C. Solid State Electronics 23 (1980) 987
14. Schlom D.J., and Haeni J.H. MRS Bull. (2002) 198
15. Schamm S., Coulon P.E., Miao S., Volkos S.N., Lu L.H., Lamagna L., Wiemer C., Tsoutsou D., Scarel G., and Fanciulli M. J. Electrochem. Soc. 156 1 (2009) H1
16. Kukli K., Ritala M., Pore V., Leskelä M., Sajavaara T., Hedge R.I., Gilmer D.C., Tobin P.J., Jones A.C., and Aspinall H.C. Chem. Vap. Deposition 12 (2006) 158
17. Miotti L., Bastos K.P., Driemeier C., Edon V., Hugon M.C., Agius B., and Baumvol I.J.R. Appl. Phys. Lett. 87 (2005) 022901
18. Park B.-E., and Ishiwara H. Appl. Phys. Lett. 82 (2003) 1197
19. Triyoso D.H., Hedge R.I., Grant J.M., Schaeffer J.K., Roan D., White Jr. B.E., and Tobin P.J. J. Vac. Sci. Technol. B 23 1 (2005) 288