Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films

Applied Physics Letters

Volumn 91, Issue 16, 2007, Pages

  Adelmann, C ^a   Sriramkumar, V ^a   Van Elshocht, S ^a,c   Lehnen, P ^a   Conard, T ^a   De Gendt, S ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); DYSPROSIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; SCANDIUM;

ATOMIC VAPOR DEPOSITION; OXIDE THICKNESS;

THIN FILMS;

EID: 35549001468     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2798498     Document Type: Article

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