NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 862-864

  Chen, Jingde ^a   Wang, X P ^a   Li, Ming Fu ^a,b   Lee, S J ^a   Yu, M B ^c   Shen, C ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b FUDAN UNIVERSITY   (China)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Erbium; High dielectric; Lanthanide; Metal gate; MOS capacitor; Rare earth metal

Indexed keywords

GATES (TRANSISTOR); LANTHANUM COMPOUNDS; MOS CAPACITORS; MOSFET DEVICES; RARE EARTH ELEMENTS; SEMICONDUCTOR DOPING; TANTALUM COMPOUNDS;

ERBIUM-OXIDE-DOPED HAFNIUM OXIDE; LANTHANIDE-OXIDE DOPED HAFNIUM OXIDES;

GATE DIELECTRICS;

EID: 34948898010     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.904210     Document Type: Article

References (15)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-k gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, pp. 5243-5275, May 2001.
2. x and metal gates," in IEDM. Tech. Dig., 2003, pp. 307-310.
3. Y.-C. Yeo, T.-J. King, and C. Hu, "Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology," J. Appl. Phys., vol. 92, no. 12, pp. 7266-7271, Dec. 2002.
4. H. Y. Yu, C. Ren, Y.-C. Yeo, J. F. Kang, X. P. Wang, H. H. H. Ma, M.-F. Li, D. S. H. Chan, and D.-L. Kwong, "Fermi pinning induced thermal instability of metal gate work functions," IEEE Electron Device Lett., vol. 25, no. 5, pp. 337-339, May 2004.
5. X. P. Wang, M.-F. Li, C. Ren, X. F. Yu, C. Shen, H. H. Ma, A. Chin, C. X. Zhu, J. Ning, M. B. Yu, and D.-L. Kwong, "Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs," IEEE Electron Device Lett., vol. 27, no. 1, pp. 31-33, Jan. 2006.
6. Y. Zhao, M. Toyama, K. Kita, K. Kyuno, and A. Toriumi, "Moisture absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon," in Proc. SSDM Dig. 2005, pp. 546-547.
7. C. A. Richter, A. R. Hefner, and E. M. Vogel, "A comparison of quantum-mechanical capacitance-voltage simulators," IEEE Electron Device Lett., vol. 22, no. 1, pp. 35-37, Jan. 2001.
8. H. R. Huff and D. C. Gilmer, High Dielectric Constant Materials. New York: Springer-Verlag, 2005, p. 246.
9. J. Robertson, "Band offsets of wide-band-gap oxides and implications for future electronic devices," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 18, no. 3, pp. 1785-1791, May 2000.
10. T.-M. Pan, C.-L. Chen, W. W. Yeh, and S.-J. Hou, "Structural and electrical characteristics of thin oxide gate dielectrics," Appl. Phys. Lett., vol. 89, no. 22, p. 222 912, Nov. 2006.
11. CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 2003, pp. 9-76.
12. th tunability for metal-gated MOS devices with HfLaO gate dielectrics," IEEE Electron Device Lett., vol. 28, no. 4, pp. 258-260, Apr. 2007.
13. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, "Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics," Appl. Phys. Lett., vol. 77, no. 17, pp. 2710-2712, Oct. 2000.
14. G. Thareja, H. C. Wen, R. Harris, P. Majhi, B. H. Lee, and J. C. Lee, "NMOS compatible work function of TaN metal gate with gadolinium oxide buffer layer on Hf-based dielectrics," IEEE Electron Device Lett. vol. 27, no. 10, pp. 802-804, Oct. 2006.
15. H. N. Alshareef, M. Quevedo-Lopez, H. C. Wen, R. Harris, P. Kirsch, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, "Work function engineering using lanthanum oxide interfacial layers," Appl. Phys. Lett., vol. 89, no. 23, p. 232 103, Dec. 2006.