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Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages 1-6

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

(6) Zhao, C Z a Werner, M a Taylor, S a Chalker, P R a Jones, A C a Zhao, Chun a

a UNIVERSITY OF LIVERPOOL (United Kingdom)

Author keywords

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; LANTHANUM; NITROGEN; ZIRCONIA; DIELECTRIC RELAXATION;

ANNEALED FILMS; AS-DEPOSITED FILMS; CUBIC PHASE; DOPED ZIRCONIA; HAVRILIAK-NEGAMI; K-VALUES; POST DEPOSITION ANNEALING; RELAXATION BEHAVIORS; DIELECTRIC CONSTANTS; K-VALUE; ZIRCONIA FILM;

DIELECTRIC RELAXATION; ANNEALING;

EID: 79952706990 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-010-9782-z Document Type: Article

Times cited : (23)

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