Post metallization annealing study in La2O3/Ge MOS structure

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1638-1641

  Song, J ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Germanide; Germanium; High k; La2O3; PMA; Post metallization annealing

Indexed keywords

GERMANIDE; HIGH-K; LA2O3; PMA; POST METALLIZATION ANNEALING;

ANNEALING; LANTHANUM; METALLIZING; PLATINUM; PNEUMATIC CONTROL EQUIPMENT; TANTALUM;

GERMANIUM;

EID: 67349227895     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.051     Document Type: Article

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