Erratum to "Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing" Microelectronic Engineering 85 (2008) 2411-2413 (DOI:10.1016/j.mee.2008.09.033);Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2411-2413

  Tsoutsou, D ^a   Scarel, G ^a   Debernardi, A ^a   Capelli, S C ^a   Volkos, S N ^a   Lamagna, L ^a   Schamm, S ^b   Coulon, P E ^b   Fanciulli, M ^a,c  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

High dielectrics; La2O3; Lanthanum oxide; Non volatile memories

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; DATA STORAGE EQUIPMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; RARE EARTHS; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; GRAZING-INCIDENCE X-RAY DIFFRACTION; LA2O3; NON-VOLATILE MEMORY; RAPID TRANSFORMATIONS; RARE EARTH OXIDE; VACUUM-ANNEALING; X-RAY DIFFRACTION STUDIES;

LANTHANUM OXIDES;

EID: 56649091205     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.062     Document Type: Erratum

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