Volatility and vapourisation characterisation of new precursors

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 718-721

  Rushworth, Simon ^a   Davies, Hywel ^a   Kingsley, Andrew ^a   Leese, Thomas ^a   Odedra, Rajesh ^a  

^a Epichem Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM; PARAMETER ESTIMATION; RUTHENIUM; THERMOGRAVIMETRIC ANALYSIS; VAPORIZATION;

PRECURSOR VOLATILITY; SOURCE MATERIALS; VAPOUR PRESSURE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 34247161324     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.070     Document Type: Article

References (1)

1. Rushworth S.A., et al. Vapour pressure measurement of low volatility precursors. Microeletron Reliab 45 5-6 (2005) 1000-1002