Dielectric relaxation of lanthanum doped zirconium oxide

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Zhao, C Z ^a   Taylor, S ^a   Werner, M ^a   Chalker, P R ^a   Murray, R T ^a   Gaskell, J M ^a,b   Jones, A C ^a,b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b XI AN JIAOTONG LIVERPOOL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); LANTHANUM; LANTHANUM ALLOYS; OXIDE FILMS; ZIRCONIA; ZIRCONIUM;

CRYSTAL GRAINS; CUBIC PHASE; DIELECTRIC CONSTANTS; DOPED FILMS; DOPING LEVELS; MONOCLINIC PHASE; POWER LAWS; WILLIAMS; ZIRCONIUM OXIDES;

DIELECTRIC RELAXATION;

EID: 61449233200     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078038     Document Type: Article

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