Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition

Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

  Lamperti, A ^a   Lamagna, L ^a   Congedo, G ^a   Spiga, S ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC PHASE; CRYSTALLOGRAPHIC PHASIS; CRYSTALLOGRAPHIC STRUCTURE; DEPOSITION FILMS; DEPOSITION PROCESS; DEPTH PROFILE; DIELECTRIC CONSTANT VALUES; GRAZING INCIDENCE X-RAY DIFFRACTION; MICRO-ELECTRONIC DEVICES; MIXED PHASIS; MONOCLINIC PHASE; NON-VOLATILE MEMORIES; OXIDIZING AGENTS; OXYGEN PRECURSORS; OXYGEN SOURCES; PHASE STABILIZATION; REPLACEMENT MATERIALS; SI (100) SUBSTRATE; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; X RAY REFLECTIVITY;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; MICROELECTRONICS; OXYGEN; PERMITTIVITY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZIRCONIUM;

ZIRCONIUM ALLOYS;

EID: 80052092920     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3625254     Document Type: Article

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