Atomic layer deposition of Gd-doped HfO2 thin films

Journal of the Electrochemical Society

Volumn 157, Issue 4, 2010, Pages

  Adelmann, C ^a   Tielens, H ^a   Dewulf, D ^b   Hardy, A ^b   Pierreux, D ^c   Swerts, J ^a   Rosseel, E ^a   Shi, X ^a   Van Bael, M K ^b   Kittl, J A ^a   Van Elshocht, S ^a  

^a IMEC   (Belgium)

^b HASSELT UNIVERSITY   (Belgium)

^c ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DENSITY; CONCENTRATION OF; CYCLOPENTADIENYLS; DIELECTRIC CONSTANTS; GROWTH CURVES; LASER ANNEALING; TEMPERATURE RANGE; THERMALLY STABLE;

ATOMS; DEPOSITION; HAFNIUM; HAFNIUM COMPOUNDS; THIN FILMS;

GADOLINIUM;

EID: 77949809984     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3301663     Document Type: Conference Paper

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