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Zeitschrift fur Anorganische und Allgemeine Chemie

Volumn 633, Issue 11-12, 2007, Pages 2097-2103

[(Me3Si)2N]3Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films

(9) Scarel, G a Wiemer, C a Fanciulli, M a Fedushkin, I L b Fukin, G K b Domrachev, G A b Lebedinskii, Y c Zenkevich, A c Pavia, G d

a LABORATORIO MDM (Italy)

b G A RAZUVAEV INSTITUTE OF ORGANOMETALLIC CHEMISTRY (Russian Federation)

c NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI (Russian Federation)

d STMICROELECTRONICS (Italy)

Author keywords

Agostic interaction; Atomic layer deposition; High k dielectrics; Lutetium; Silicates; Tris bis(trimethylsilyl)amido lutetium

Indexed keywords

EID: 34548751185 PISSN: 00442313 EISSN: 15213749 Source Type: Journal
DOI: 10.1002/zaac.200700223 Document Type: Article

Times cited : (26)

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