Atomic layer deposition of lanthanum stabilized amorphous hafnium oxide thin films

Chemistry of Materials

Volumn 21, Issue 14, 2009, Pages 3096-3101

  Wang, Tuo ^a   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ATOMIC PERCENTAGE; COMPOSITIONAL ANALYSIS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLIZATION TEMPERATURE; DIELECTRIC THIN FILMS; HAFNIUM DIOXIDE; HAFNIUM OXIDE THIN FILMS; HIGH-TEMPERATURE ANNEALING; METAL BASIS; POTENTIAL METHODS; SI(1 0 0);

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; DEPOSITION; HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM; OXIDE FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 67651108735     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9001064     Document Type: Article

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