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Electrochemical and Solid-State Letters

Volumn 12, Issue 4, 2009, Pages

Atomic layer deposition of lanthanum-based ternary oxides

(7) Wang, Hongtao a Wang, Jun Jieh b Gordon, Roy b Lehn, Jean Sébastien M c Li, Huazhi c Hong, Daewon c Shenai, Deo V c

a HARVARD UNIVERSITY (United States)

b HARVARD UNIVERSITY (United States)

c ROHM AND HAAS COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ASPECT RATIO; ATOMIC PHYSICS; ELECTRODEPOSITION; LANTHANUM; LANTHANUM ALLOYS; LUTETIUM; SCANDIUM; SCANDIUM COMPOUNDS; SILICON COMPOUNDS; THICKNESS MEASUREMENT; YTTRIUM ALLOYS;

ATOMIC LAYERS; CONFORMAL COATINGS; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE THICKNESS; ELECTRICAL ANALYSIS; INTERFACIAL LAYERS; LAYER STRUCTURES; LEAKAGE CURRENT DENSITIES; ORDERS OF MAGNITUDES; POLY-CRYSTALLINE; SI SUBSTRATES; TERNARY OXIDES; TRANSMISSION ELECTRONS;

AMORPHOUS FILMS;

EID: 60449104295 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3074314 Document Type: Article

Times cited : (46)

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