Electrical properties of La2 O3 and Hf O2 La2 O3 gate dielectrics for germanium metal-oxide-semiconductor devices

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Mavrou, G ^a   Galata, S ^a   Tsipas, P ^a   Sotiropoulos, A ^a   Panayiotatos, Y ^a   Dimoulas, A ^a   Evangelou, E K ^b   Seo, J W ^c   Dieker, Ch ^c  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC PROPERTIES; LANTHANUM COMPOUNDS; SEMICONDUCTING GERMANIUM COMPOUNDS;

METAL-OXIDE-SEMICONDUCTOR DEVICES; PASSIVATING PROPERTIES; POST DEPOSITION ANNEALING;

GATE DIELECTRICS;

EID: 38349161968     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2827499     Document Type: Article

References (36)

1. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 437 (2002).
2. C. O. Chui, F. Ito, and K. C. Saraswat, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2006.875808 53, 1501 (2006.).
3. C. O. Chui, H. Kim, D. Chi, and P. C. McIntyre, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2006.875812 53, 1509 (2006).
4. Germanium-Based Technologies: From Materials to Devices, 1st ed., edited by, C. Claeys, and, E. Simoen, (Elsevier, Amsterdam, 2007).
5. P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, L.-Å. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M. M. Heyns, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 655 (2006).
6. A. Ritenour, S. Yu, M. L. Lee, N. Lu, W. Bai, A. Pitera, E. A. Fitzerald, D. L. Kwong, and D. A. Antoniadis, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 433 (2003).
7. O. Weber, Y. Bogumilowicz, T. Ernst, J.-M. Hartmann, F. Ducroquet, F. Andrieu, C. Dupre, L. Clavelier, C. Le Royer, N. Cherkashin, M. Hytch, D. Rouchon, H. Dansas, A.-M. Papon, V. Carron, C. Tabone, and S. Deleonibus, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2005, 143 (2005).
8. A. Ritenour, A. Khakifirooz, D. A. Antoniadis, R. Z. Lei, W. Tsai, A. Dimoulas, G. Mavrou, and Y. Panayiotatos, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2189456 88, 132107 (2006).
9. S. Joshi, C. Krug, D. Heh, H. J. Na, H. R. Harris, J. W. Oh, P. D. Kirsch, P. Majhi, B. H. Lee, H.-H. Tseng, R. Jammy, J. C. Lee, and S. Banerjee, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 308 (2007).
10. M. Houssa, G. Pourtois, B. Kaczer, B. De Jaeger, F. E. Leys, D. Nelis, K. Paredis, A. Vantomme, M. Caymax, M. Meuris, and M. M. Heyns, Microelectron. Eng. MIENEF 0167-9317 84, 2267 (2007).
11. G. Pourtois, M. Houssa, B. De Jaeger, B. Kaczer, F. Leys, M. Meuris, M. Caymax, G. Groeseneken, and M. M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2756367 91, 023506 (2007).
12. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2410241 89, 252110 (2006).
13. K. Martens, B. De Jaeger, R. Bonzom, J. Van Steenbergen, M. Meuris, G. Groeseneken, and H. Maes, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.873767 27, 405 (2006).
14. M. M. Frank, S. J. Koster, M. Copel, J. A. Ott, V. K. Paruchuri, and H. Shang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2338751 89, 112905 (2006).
15. M. Houssa, D. Nelis, D. Helin, G. Pourtois, T. Conard, K. Paredis, K. Vanormelingen, A. Vantomme, M. K. Van Bael, J. Mullens, M. Caymax, M. Meuris, and M. M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2743385 90, 222105 (2007).
16. K. H. Kim, R. G. Gordon, A. Ritenour, and D. A. Antoniadis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2741609 90, 212104 (2007).
17. A. Molle, Md. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2337543 89, 083504 (2006).
18. M. Perego, G. Scarel, M. Fanciulli, I. L. Fedushkin, and A. A. Skatova, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2723684 90, 162115 (2007).
19. S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, and N. Sugiyama, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2007.04.129 84, 2314 (2007).
20. A. Dimoulas, in Defects in High-k Gate Dielectric Stacks, NATO Science Series II, edited by, E. Gusev, (Springer, Netherlands, 2006), Vol. 220, p. 237.
21. A. Dimoulas, in Rare Earth Oxide Thin Films Growth Characterization and Applications, edited by, M. Fanciulli, and, G. Scarel, (Springer, Berlin, 2007), pp. 379-390.
22. A. Dimoulas, D. P. Brunco, S. Ferrari, J. W. Seo, Y. Panayiotaos, A. Sotiropoulos, T. Conard, M. Caymax, S. Spiga, M. Fanciulli, Ch. Dieker, E. K. Evangelou, S. Galata, M. Houssa, and M. M. Heyns, Thin Solid Films THSFAP 0040-6090 515, 6337 (2007).
23. D. P. Brunco, A. Dimoulas, N. Boukos, M. Houssa, T. Conard, K. Martens, C. Zhao, F. Bellenger, M. Caymax, M. Meuris, and M. M. Heyns, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2756519 102, 024104 (2007).
24. G. Nicholas, D. P. Brunco, A. Dimoulas, J. van Steenbergen, F. Bellenger, M. Houssa, M. Caymax, M. Meuris, Y. Panayiotatos, and A. Sotiropoulos, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2007.896352 54, 1425 (2007).
25. V. V. Afanas'ev, S. Shamuillia, A. Stesmans, A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, M. Houssa, and D. P. Brunco, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2191736 88, 132111 (2006).
26. A. Molle, C. Wiemer, Md. N. K. Bhuiyan, G. Tallarida, M. Fanciulli, and G. Pavia, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2738367 90, 193511 (2007).
27. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. Copel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1320464 77, 2710 (2000).
28. Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, and C. M. Kwei, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.847374 21, 341 (2000).
29. K. Kakushima, K. Tsutsui, S.-I. Ohmi, P. Ahmet, V. R. Rao, and H. Iwai, Top. Appl. Phys. TAPHD4 0303-4216 106, 345 (2007).
30. J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugi, T. Hattori, and H. Iwai, Microelectron. Eng. MIENEF 0167-9317 84, 2336 (2007).
31. G. Mavrou, S. F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J. W. Seo, and Ch. Dieker, Microelectron. Eng. MIENEF 0167-9317 84, 2324 (2007).
32. A. Dimoulas, G. Mavrou, G. Vellianitis, E. K. Evangelou, N. Boukos, M. Houssa, and M. Caymax, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1854195 86, 032908 (2005).
33. A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1944227 86, 223507 (2005).
34. P. Batude, X. Garros, L. Clavelier, C. Le Royer, J. M. Hartmann, V. Loup, P. Besson, L. Vandroux, S. Deleonibus, and F. Boulanger, Microelectron. Eng. MIENEF 0167-9317 84, 2320 (2007).
35. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), pp. 196-197.
36. G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J. C. Hooker, and T. Conard, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1639942 84, 260 (2004).