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Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

Enhanced electrical properties of atomic layer deposited La2 O3 thin films with embedded ZrO2 nanocrystals

(8) Jinesh, K B a Klootwijk, J H b Lamy, Y a Wolters, R a Tois, E c Tuominen, M c Roozeboom, F a Besling, W F A a

a NXP TSMC Research Center (Netherlands)

b PHILIPS RESEARCH LABORATORIES (Netherlands)

c ASM Microchemistry Oy (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; LANTHANUM; LANTHANUM ALLOYS; LEAKAGE CURRENTS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OXIDES; OZONE WATER TREATMENT; PULSED LASER DEPOSITION; THICK FILMS; THIN FILMS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

ATOMIC LAYER DEPOSITED; ATOMIC LAYERS; DIELECTRIC PERMITTIVITIES; DIELECTRIC THIN FILMS; ELECTRIC PERFORMANCES; ELECTRICAL PROPERTIES; LANTHANUM OXIDES; MIXED OXIDES; SPONTANEOUS NUCLEATIONS; ZIRCONIUM OXIDE FILMS; ZIRCONIUM OXIDES;

OXIDE FILMS;

EID: 55149113882 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3009202 Document Type: Article

Times cited : (13)

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