Chemical/structural nanocharacterization and electrical properties of ALD-gown La2O3 Si interfaces for advanced gate stacks

Journal of the Electrochemical Society

Volumn 156, Issue 1, 2009, Pages

  Schamm, S ^a   Coulon, P E ^a   Miao, S ^a   Volkos, S N ^b   Lu, L H ^b   Lamagna, L ^b   Wiemer, C ^b   Tsoutsou, D ^b   Scarel, G ^b   Fanciulli, M ^b,c  

^a CNRS   (France)

^b LABORATORIO MDM   (Italy)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOAD MANAGEMENT; ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LANTHANUM; LOGIC GATES; MICROSCOPIC EXAMINATION; PHASE INTERFACES; PHOTOLITHOGRAPHY; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RARE EARTH ELEMENTS; SILICON;

ALD PRECURSORS; APPLICATIONS.; ATOMIC LAYER DEPOSITION (ALD; ELECTRICAL PROPERTIES; GATE STACKS; HIGH RESOLUTIONS; INTERFACE LAYERS; INTERFACE TRAP DENSITIES; NANOMETRIC SCALES; OXIDE/SEMICONDUCTOR INTERFACES; SAMPLE THICKNESSES; SI SURFACES; TRANSISTOR RELIABILITIES; TRANSMISSION ELECTRON MICROSCOPY MEASUREMENTS; X-RAY DIFFRACTIONS;

ATOMIC LAYER DEPOSITION;

EID: 56749155953     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3000594     Document Type: Article

References (28)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
2. G. Scarel, A. Svane, and M. Fanciulli, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, Topics in Applied Physics, Vol. 106, M. Fanciulli, and, G. Scarel, Editors, p. 1, Springer-Verlag, New York (2006).
3. D. G. Schlom and J. H. Haeni, MRS Bull., 27, 198 (2002).
4. L. Marsella and V. Fiorentini, Phys. Rev. B, 69, 172103 (2004).
5. S. Stemmer, J. Vac. Sci. Technol. B, 22, 791 (2004).
6. S. Stemmer, J.-P. Maria, and A. I. Kingon, Appl. Phys. Lett., 79, 102 (2001).
7. G. A. Botton, J. A. Gupta, D. Landheer, J. P. McCaffrey, G. I. Sproule, and M. J. Graham, J. Appl. Phys., 91, 2921 (2002).
8. V. Narayanan, S. Guha, M. Copel, N. A. Bojarczuk, P. L. Flaitz, and M. Gribelyuk, Appl. Phys. Lett., 81, 4183 (2002).
9. R. Lo Nigro and R. G. Toro, Adv. Mater. (Weinheim, Ger.), 15, 1071 (2003).
10. D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, M. P. Agustin, Y. Yang, S. Stemmer, L. V. Goncharova, T. Gustafsson, and E. Garfunkel, J. Appl. Phys., 98, 024314 (2005).
11. S. Schamm, G. Scarel, and M. Fanciulli, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, Topics in Applied Physics, Vol. 106, M. Fanciulli, and, G. Scarel, Editors, p. 153, Springer-Verlag, New York (2006).
12. S. Stemmer, D. O. Klenov, Z. Chen, D. Niu, R. W. Ashcraft, and G. N. Parsons, Appl. Phys. Lett., 81, 712 (2002).
13. G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. Fedushkin, H. Schumann, Y. Lebedinskii, and A. Zenkevich, Appl. Phys. Lett., 85, 630 (2004).
14. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys., 90, 4587 (2001).
15. G. Adachi and N. Imanaka, Chem. Rev. (Washington, D.C.), 98, 1479 (1998).
16. G. Scarel, A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli, Appl. Phys. Lett., 91, 102901 (2007).
17. S. Jeon and H. Hwang, J. Appl. Phys., 93, 6393 (2003).
18. H. Ono and T. Katsumata, Appl. Phys. Lett., 78, 1832 (2001).
19. S. Ohmi, M. Takeda, H. Ishiwara, and H. Iwai, J. Electrochem. Soc., 151, G279 (2004).
20. D. Schmeißer, F. Zheng, V. Perez-Dieste, F. J. Himpsel, R. LoNigro, R. G. Toro, G. Malandrino, and I. L. Fragala, Mater. Sci. Eng., C, 26, 1122 (2006).
21. S. Schamm, P.-E. Coulon, S. Miao, S. N. Volkos, L. H. Lu, L. Lamagna, C. Wiemer, D. Tsoutsou, G. Scarel, and M. Fanciulli, ECS Trans. 10.1149/1.2911487, 13 (1), 77 (2008).
22. W. A. Hill and C. C. Coleman, Solid-State Electron., 23, 987 (1980).
23. S. Bernal, G. Blanco, J. M. Gatica, J. A. Ṕrez-Omil, J. M. Pintado, and H. Vidal, in Binary Rare Earth Oxides, G. Adachi, N. Inamaka, and, C. Kang, Editors, p. 19, Springer, New York (2004).
24. Y. Sakabe, Y. Hamaji, H. Sano, and N. Wada, Jpn. J. Appl. Phys., Part 1, 41, 5668 (2002).
25. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London), 399, 758 (1999).
26. N. Inoue, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Jpn. J. Appl. Phys., Part 1, 46, 6480 (2007).
27. P. K. Hurley, K. Cherkaoui, E. O'Connor, M. C. Lemme, H. D. B. Gottlob, M. Schmidt, S. Hall, Y. Lu, O. Buiu, B. Raeissi, J. Electrochem. Soc., 155, G13 (2008).
28. E. H. Poindexter, Semicond. Sci. Technol., 4, 961 (1989).