Investigation of ZrO2 - Gd2O3 based high- k materials as capacitor dielectrics

Journal of the Electrochemical Society

Volumn 157, Issue 10, 2010, Pages

  Jgi, Indrek ^a   Tamm, Aile ^a   Kukli, Kaupo ^a,b   Kemell, Marianna ^b   Lu, Jun ^c,e   Sajavaara, Timo ^d   Ritala, Mikko ^b   Leskelä, Markku ^b  

^a UNIVERSITY OF TARTU   (Estonia)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UPPSALA UNIVERSITY   (Sweden)

^d UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^e LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CAPACITOR DIELECTRICS; CHARGE STORAGE; EQUIVALENT OXIDE THICKNESS; FOWLER-NORDHEIM; HIGH-K MATERIALS; HIGH-PERMITTIVITY DIELECTRIC MATERIALS; LAMINATED STRUCTURES; MIXED FILMS; MONOCLINIC PHASE; NANO-LAMINATES; POOLE-FRENKEL CONDUCTION MECHANISM; TETRAGONAL PHASIS; TRAP ASSISTED TUNNELING;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; LEAKAGE CURRENTS; MIXTURES; PERMITTIVITY; ZIRCONIUM ALLOYS;

GADOLINIUM;

EID: 77956213102     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3478117     Document Type: Article

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