Atomic layer deposition of rare-earth oxide thin films for high-κ dielectric applications

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 525-536

  Katamreddy, Rajesh ^a   Stafford, Nathan A ^a   Guerin, Laurie ^a   Feist, Ben ^a   Dussarrat, Christian ^a   Pallem, Venkateswara ^a   Weiland, Conan ^b   Opila, Robert ^b  

^a AIR LIQUIDE   (France)

^b DUPONT COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; LOW-K DIELECTRIC; METALS; NITRIDES; OXIDE FILMS; RARE EARTH COMPOUNDS; RARE EARTHS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON NITRIDE; THERMODYNAMIC PROPERTIES;

CYCLOPENTADIENYLS; DEPOSITION METHODS; DIELECTRIC APPLICATION; METAL OXIDE DEPOSITION; METAL OXIDE LAYERS; SEMICONDUCTOR MANUFACTURING PROCESS; SEMICONDUCTOR PROCESS; STRINGENT REQUIREMENT;

ATOMIC LAYER DEPOSITION;

EID: 76549125353     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122114     Document Type: Conference Paper

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