Electrical and physical properties of Er-doped HfO2 high- k dielectrics prepared by atomic layer deposition

Electrochemical and Solid-State Letters

Volumn 13, Issue 2, 2010, Pages

  Wu, L ^a   Yu, H Y ^a   Pey, K L ^a   Pan, J S ^c   Tuominen, M ^d   Tois, Eva ^d   Lee, D Y ^b   Hsu, K Y ^b   Huang, K T ^b   Tao, H J ^b   Mii, Y J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; ER-DOPED; HIGH-K DIELECTRIC; K-VALUE; LEAKAGE PROPERTY; THERMAL STABILITY; TIN METAL GATE; X-RAY DIFFRACTION STUDIES;

ELECTRIC PROPERTIES; ERBIUM; HAFNIUM COMPOUNDS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 74249122418     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3266877     Document Type: Article

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