Growth of bulk GaN single crystals by the pressure-controlled solution growth method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2394-2398

  Inoue, Takayuki ^a   Seki, Yoji ^a   Oda, Osamu ^a   Kurai, Satoshi ^b   Yamada, Yoichi ^b   Taguchi, Tsunemasa ^b  

^a JAPAN ENERGY CORPORATION   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Bulk single crystals; Gallium nitride; Over pressure; Pressure controlled solution growth method; Solution growth method; Supersaturation

Indexed keywords

DIFFUSION IN GASES; FURNACES; GRAIN SIZE AND SHAPE; HIGH PRESSURE EFFECTS; PRESSURE CONTROL; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUPERSATURATION; THERMAL EFFECTS;

CRYSTALLINITY; GALLIUM NITRIDE; HIGH PRESSURE FURNACE; PRESSURE CONTROLLED SOLUTION GROWTH METHOD;

CRYSTAL GROWTH;

EID: 0033715101     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2394     Document Type: Article

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