Hydride vapor phase epitaxy of GaN on NdGaO3 substrate and realization of freestanding GaN Wafers with 2-inch scale

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2399-2401

  Wakahara, Akihiro ^a   Yamamoto, Takenori ^a   Ishio, Kouji ^a   Yoshida, Akira ^a   Seki, Youji ^b   Kainosho, Keiji ^b   Oda, Osamu ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN ENERGY CORPORATION   (Japan)

Author keywords

Freestanding GaN wafer; GaN; Hydride vapor phase epitaxy; NdGaO3

Indexed keywords

AMMONIA; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); FILM GROWTH; HYDRIDES; LOW TEMPERATURE EFFECTS; NEODYMIUM COMPOUNDS; PHOTOLUMINESCENCE; SUBSTRATES; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

FREESTANDING GALLIUM NITRIDE WAFERS; GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033717667     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2399     Document Type: Article

References (6)

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