GaN-based high power blue-violet laser diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3206-3210

  Tojyo, T ^a   Asano, T ^a   Takeya, M ^a   Hino, T ^a   Kijima, S ^a   Goto, S ^a   Uchida, S ^a   Ikeda, M ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Cleave; ELO; EPD; GaInN; GaN; Laser diodes; MQW; Ridge

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWTH (ELO); MULTIPLE QUANTUM WELL (MQW);

SEMICONDUCTOR LASERS;

EID: 0035328751     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3206     Document Type: Article

References (15)