Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Marchand, H ^a   Ibbetson, J P ^a   Fini, Paul T ^a   Kozodoy, Peter ^a   Keller, S ^a   DenBaars, Steven ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON DENSITY MEASUREMENT; EPITAXIAL GROWTH; HYDROGEN; MICROSTRUCTURE; MORPHOLOGY; NITROGEN; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTOR LASERS; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; LATERAL EPITAXIAL GROWTH (LEO); STEP EDGE TERMINATIONS; THREADING DISLOCATIONS (TD);

GALLIUM NITRIDE;

EID: 0346254618     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000752     Document Type: Article

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