High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers

Applied Physics Letters

Volumn 75, Issue 12, 1999, Pages 1706-1708

  Fini, P ^a   Zhao, L ^a   Moran, B ^a   Hansen, M ^a   Marchand, H ^a   Ibbetson, J P ^a   DenBaars, S P ^a   Mishra, U K ^a   Speck, J S ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COALESCENCE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LATERAL EPITAXIAL OVERGROWTH (LEO);

SEMICONDUCTING FILMS;

EID: 0032606657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124796     Document Type: Article

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