High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 61-66

  Sasaoka, C ^a   Sunakawa, H ^a   Kimura, A ^a   Nido, M ^a   Usui, A ^a   Sakai, A ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dislocation; GaN; Hydride vapor phase epitaxy; InGaN MQW; LED

Indexed keywords

DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092812     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00169-9     Document Type: Article

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