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Volumn 14, Issue 3, 1999, Pages 278-282
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Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperature
c
LG
(South Korea)
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Author keywords
[No Author keywords available]
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Indexed keywords
FILM GROWTH;
PHOTOLUMINESCENCE;
SAPPHIRE;
SINGLE CRYSTALS;
STIMULATED EMISSION;
SUBSTRATES;
THICK FILMS;
VAPOR PHASE EPITAXY;
X RAY DIFFRACTION ANALYSIS;
GALLIUM NITRIDE;
HYDRIDE VAPOR PHASE EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032627005
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/14/3/012 Document Type: Article |
Times cited : (7)
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References (19)
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