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Volumn 218, Issue 1, 2000, Pages 7-12

Growth of GaN single crystals from a Na-Ga melt at 750 °C and 5 MPa of N2

(8) Aoki, Masato a Yamane, Hisanori a Shimada, Masahiko a Sekiguchi, Takashi b Hanada, Takashi b Yao, Takafumi b Sarayama, Seiji c Disalvo, Francis J d

a TOHOKU UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c RICOH COMPANY LTD (Japan)

d Department of Molecular Biology and Genetics (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CATHODOLUMINESCENCE; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; GALLIUM; MORPHOLOGY; NITRIDES; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SODIUM;

CATHODOLUMINESCENCE SPECTROSCOPY; GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0034273269 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00518-2 Document Type: Article

Times cited : (77)

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