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Journal of Crystal Growth

Volumn 187, Issue 2, 1998, Pages 167-177

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

(5) Vennegues P a Beaumont, B a Haffouz, S a Vaille, M a Gibart, P a

a CNRS (France)

Author keywords

III V nitride; MOVPE; TEM

Indexed keywords

COALESCENCE; CRYSTAL DEFECTS; CRYSTAL LATTICES; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITROGEN; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE; SURFACE TREATMENT;

CARRIER GAS; GALLIUM NITRIDE; MORPHACTANT EFFECTS;

SEMICONDUCTING FILMS;

EID: 0032071875 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00875-0 Document Type: Article

Times cited : (133)

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