High-pressure process to produce GaN crystals

Applied Physics Letters

Volumn 77, Issue 25, 2000, Pages 4172-4174

  Gilbert, Donald R ^a   Novikov, Alexander ^b   Patrin, Nikolay ^b   Budai, John S ^c   Kelly, Frank ^a   Chodelka, Robert ^a   Abbaschian, Reza ^a   Pearton, Stephen J ^a   Singh, Rajiv ^a  

^a University of Florida   (United States)

^b Gemesis Corporation   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006732720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330754     Document Type: Article

References (12)

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