Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 9 A/B, 2001, Pages

  Kuramoto, M ^a   Kimura, A ^a   Sasaoka, C ^a   Arakida, T ^a   Nido, M ^a   Mizuta, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

GaN; Laser diodes; n GaN substrate; Ridge geometry; Selective re growth; Transverse mode

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

FAR FIELD PATTERNS; INDIUM GALLIUM NITRIDE; RIDGE GEOMETRY; SELECTIVE AREA EPITAXIAL REGROWTH; TRANSVERSE MODE;

QUANTUM WELL LASERS;

EID: 0035885689     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l925     Document Type: Letter

References (8)