Status of reliability of GaN-based heterojunction field effect transistors

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1127-1139

  Leach, Jacob H ^a   Morkoç, Hadis ^b  

^a Virginia Commonwealth University   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

Degradation; Failure mechanisms; GaN heterojunction field effect transistors (HFET); Reliability

Indexed keywords

ACTIVATION ENERGY; DEGRADATION; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; OUTAGES; RELIABILITY;

FAILURE MECHANISM; HETEROJUNCTION FIELD EFFECT TRANSISTOR; HIGH FREQUENCY HF; LONG TERM STABILITY; MEAN TIME TO FAILURE; PHYSICAL MECHANISM; RADIO FREQUENCIES; THREE TEMPERATURE;

FAILURE (MECHANICAL);

EID: 77953687809     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2044858     Document Type: Conference Paper

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