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Volumn 7216, Issue , 2009, Pages

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

Author keywords

GaN; HEMT; HFET; Large signal; Microwave; Modeling; Simulation

Indexed keywords

GAN; HEMT; HFET; LARGE-SIGNAL; MODELING; SIMULATION;

EID: 65349084939     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.803348     Document Type: Conference Paper
Times cited : (2)

References (7)
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    • 48749103893 scopus 로고    scopus 로고
    • Hong Yin, G. L. Bilbro, R. J. Trew, Y. Liu, W. Kuang, Development of a New Physics-Based RF Model for AlGaN/GaN HFETs, IEEE Wireless and Microwave Technology (WAMI) Conference 2006, Clearwater, FL, - (Dec. 4-5, 2006).
    • Hong Yin, G. L. Bilbro, R. J. Trew, Y. Liu, W. Kuang, "Development of a New Physics-Based RF Model for AlGaN/GaN HFETs", IEEE Wireless and Microwave Technology (WAMI) Conference 2006, Clearwater, FL, - (Dec. 4-5, 2006).
  • 4
    • 57349180048 scopus 로고    scopus 로고
    • Harmonic balance simulation of a new physics based model for AlGaN/GaN HFETs
    • IMS, Atlanta, Georgia, June 15-20, 2008
    • Hong Yin, Danqiong Hou, G.L. Bilbro, R.J. Trew, "Harmonic balance simulation of a new physics based model for AlGaN/GaN HFETs", IEEE MTT-S International Microwave Symposium 2008 (IMS 2008), Atlanta, Georgia, - (June 15-20, 2008).
    • (2008) IEEE MTT-S International Microwave Symposium
    • Yin, H.1    Hou, D.2    Bilbro, G.L.3    Trew, R.J.4
  • 5
    • 0023962954 scopus 로고
    • A large-signal, analytic model for the GaAs MESFET
    • Feb
    • M. A. Khatibzadeh, R. J. Trew, "A large-signal, analytic model for the GaAs MESFET," IEEE Trans. Microw. Theory Tech., vol. 36, no. 2, pp 231-238, (Feb. 1988).
    • (1988) IEEE Trans. Microw. Theory Tech , vol.36 , Issue.2 , pp. 231-238
    • Khatibzadeh, M.A.1    Trew, R.J.2
  • 6
    • 33646723273 scopus 로고    scopus 로고
    • Nonlinear source resistance in highvoltage microwave AlGaN/GaN HFETs
    • May
    • R. J. Trew, Yueying Liu, G.L. Bilbro, Weiwei Kuang, R. Vetury, J. B. Shealy, "Nonlinear source resistance in highvoltage microwave AlGaN/GaN HFETs", IEEE Trans. MTT, Vol, 54, No. 5, 2061-2067 (May 2006).
    • (2006) IEEE Trans. MTT , vol.54 , Issue.5 , pp. 2061-2067
    • Trew, R.J.1    Liu, Y.2    Bilbro, G.L.3    Weiwei Kuang, R.4    Vetury, J.5    Shealy, B.6
  • 7
    • 33646894455 scopus 로고    scopus 로고
    • SiC and GaN Transistors - Is there One Winner for Microwave Power Applications?
    • June
    • R. J. Trew, "SiC and GaN Transistors - Is there One Winner for Microwave Power Applications?", Proc. IEEE, Vol. 90, No. 6, pp. 1032-1047, (June 2002).
    • (2002) Proc. IEEE , vol.90 , Issue.6 , pp. 1032-1047
    • Trew, R.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.