Surface-charge controlled AlGaN/GaN-power HFET without current collapse and Gm dispersion

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 585-588

  Kikkawa, T ^a   Nagahara, M ^b   Okamoto, N ^a   Tateno, Y ^b   Yamaguchi, Y ^b   Hara, N ^a   Joshin, K ^a   Asbeck, P M ^c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Jujitsu Quantum Devicg Nakakoma Gun ^*  (Japan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PASSIVATION; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SUBSTRATES; TRANSCONDUCTANCE;

CONTINUOUS WAVE OPERATION; GATE ELECTRODES; OHMIC STRUCTURE; SURFACE CHARGE;

FIELD EFFECT TRANSISTORS;

EID: 0035716643     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979574     Document Type: Article

References (4)