Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4361-4363

  Mitrofanov, Oleg ^a   Manfra, Michael ^a   Weimann, Nils ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON CARBIDE;

DRAIN CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037773324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582373     Document Type: Article

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