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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2728-2731

Correlation between the leakage current and the thickness of GaN-layer of AlGaN/GaN-HFET

(8) Hinoki, Akihiro a Kamiya, Shinichi b Tsuchiya, Tadayoshi b Yamada, Tomoyuki b Kikawa, Junjiroh b Araki, Tsutomu a Suzuki, Akira a,b Nanishi, Yasushi a

a RITSUMEIKAN UNIVERSITY (Japan)

b R&D Association for Future Electron Devices (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; BUFFER LEAKAGE; GAN LAYERS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDE SEMICONDUCTORS; OHMIC METALS; RESIDUAL CARRIER; SIC SUBSTRATES; THREADING DISLOCATIONS; TRANSMISSION ELECTRON;

CHEMICAL VAPOR DEPOSITION; CORRELATION METHODS; CRYSTALS; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAM ASSISTED DEPOSITION; LEAKAGE CURRENTS; METALS; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

GALLIUM ALLOYS;

EID: 49749093409 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200674848 Document Type: Conference Paper

Times cited : (15)

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