Progress in GaN devices performances and reliability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Saunier, P ^a   Lee, C ^a   Jimenez, J ^a   Balistreri, A ^a   Dumka, D ^a   Tserng, H Q ^a   Kao, M Y ^a   Chowdhury, U ^a   Chao, P C ^b   Chu, K ^b   Souzis, A ^c   Eliashevich, I ^d   Guo, S ^d   Del Alamo, J ^e   Joh, J ^e   Shur, M ^f  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b BAE SYSTEMS   (United States)

^c II VI Inc   (United States)

^d IQE INC   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

AlGaN GaN; DARPA MTO; GaN; MMIC

Indexed keywords

(+ MOD 2N) OPERATION; (E ,2E) THEORY; ASSOCIATED GAIN; BAE SYSTEMS (CO); CHANNEL TEMPERATURE; COMMERCIAL APPLICATIONS; CRITICAL COMPONENTS; DRAIN EDGE; LOCKHEED-MARTIN (CO); MANUFACTURABILITY; NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; PIEZO-ELECTRIC EFFECTS; PLATE STRUCTURES; POWER DENSITY (PD); RF RELIABILITY; RF TECHNOLOGIES; TRIQUINT SEMICONDUCTOR (CO); WIDE-BAND-GAP SEMICONDUCTORS;

ACTIVATION ENERGY; CHEMICAL ACTIVATION; COMPUTER NETWORKS; CUBIC BORON NITRIDE; DEGRADATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; MAGNETISM; MICROFLUIDICS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NITRIDES; PIEZOELECTRICITY; PIGMENTS; PLATES (STRUCTURAL COMPONENTS); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SULFATE MINERALS; TECHNOLOGY;

SEMICONDUCTING GALLIUM;

EID: 42149096491     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.765467     Document Type: Conference Paper

References (5)

1. Y-F Wu, et al., "30W/mm GaN HEMTs by Field Plate Optimization," IEEE EDL, vol.25, pp. 117-119, Nov. 2004.
2. R. Thompson, et al., "Performance of the AlGaN HEMT Structure with a Gate Extension," IEEE Transactions on Electron Devices, vol. 51, no. 2, pp. 292-295, Feb. 2004.
3. M.Y Kao, C. Lee, R Hajji, P Saunier and H.Q Tserng, "AlGaN/GaN HEMT with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications," 2007 IEEE MTT-S IMS, June 3-8. pp. 627-629M.Y Kao, "
4. J. Jimenez, "Failure Analysis of X-band GaN FETs," CSICS ROCS, San Antonio, TX, Nov. 2006
5. J. Joh, J. del Alamo "Mechanisms for Electrical Degradation of GaN HEMT's" IEDM, San Franscisco, CA, Dec. 2006