Power electronics on InAlN/(In)GaN: Prospect for a record performance

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 510-512

  Kuzmik J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

III nitrides; Power FETs; Quantum wells; Semiconductor device modeling

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

BANDGAP BARRIER LAYER; DRAIN CURRENT; INDIUM ALUMINUM NITRIDE; POWER FIELD EFFECT TRANSISTOR; QUANTUM WELL HETEROINTERFACE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035506756     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962646     Document Type: Article

References (9)

1. Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
2. GaN: Processing, defects, and devices
3. Evaluation of effective electron velocity in AlGaN/GaN HEMTs
4. III-nitrides: Growth, characterization, and properties
5. xN grown by metal-organic chemical-vapor deposition
6. xN films on GaN grown by metalorganic vapor phase epitaxy
7. Thermodynamic analysis of the MOVPE growth of InAlN
8. Current-voltage and capacitance-voltage characteristics of modulation-doped field-effect transistors
9. Schottky-based band lineups for refractory semiconductors