High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Xie, Jinqiao ^a   Ni, Xianfeng ^a   Wu, Mo ^a   Leach, Jacob H ^a   Özgür, Ümit ^a   Morko̧, Hadis ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH SHEET CARRIER DENSITY; PINCH-OFF CHARACTERISTICS; SOURCE-DRAIN SEPARATION;

ELECTRON MOBILITY;

EID: 34848922373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2794419     Document Type: Article

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