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Volumn , Issue , 2008, Pages

Time-dependent RF performance degradation modeling of AlGaN/GaN HFETs

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROJUNCTIONS; ALGAN/GAN HFETS; DC CURRENTS; FUNCTION OF TIMES; GATE ELECTRODES; HIGH VOLTAGES; OUTPUT POWERS; PHYSICS-BASED; RELIABILITY PROBLEMS; RF CIRCUITS; RF PERFORMANCES; SEMI-CONDUCTORS; SIMULATED DATUMS; TUNNELING MECHANISMS;

EID: 55149120164     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 2
    • 42149118584 scopus 로고    scopus 로고
    • 25W X-Band GaN on Si MMIC
    • New Orleans, LA, April 11-14
    • Fanning, D.M., et. al., "25W X-Band GaN on Si MMIC," CS MANTECH 2005 Conf. Proc., New Orleans, LA, April 11-14, 2005.
    • (2005) CS MANTECH 2005 Conf. Proc
    • Fanning, D.M.1    et., al.2
  • 3
    • 4544247602 scopus 로고    scopus 로고
    • 30 GHz-band 5.8W High-Power AlGaN/GaN Heterojunction-FET
    • Fort Worth, TX, June 6-11
    • Inoue, T., and Kuzuhara, M., "30 GHz-band 5.8W High-Power AlGaN/GaN Heterojunction-FET," International Microwave Symposium Digest, vol. 3, Fort Worth, TX, June 6-11, 2004, pp. 1649-1652.
    • (2004) International Microwave Symposium Digest , vol.3 , pp. 1649-1652
    • Inoue, T.1    Kuzuhara, M.2
  • 4
    • 4544370826 scopus 로고    scopus 로고
    • An Over 200W Output Power GaN HEMT Push-Pull Amplifier with High Reliability
    • Fort Worth, TX, June 6-11
    • Kikkawa, T., et. al., "An Over 200W Output Power GaN HEMT Push-Pull Amplifier with High Reliability," International Microwave Symposium Digest, vol. 3, Fort Worth, TX, June 6-11, 2004, pp. 1347-1350.
    • (2004) International Microwave Symposium Digest , vol.3 , pp. 1347-1350
    • Kikkawa, T.1    et., al.2
  • 5
    • 0026238847 scopus 로고
    • Gate Breakdown in MESFETs and HEMTs
    • Oct
    • Trew, R.J. and Mishra, U.K., "Gate Breakdown in MESFETs and HEMTs," IEEE Electron Dev. Lett., vol. 12, pp. 524-526, Oct. 1991.
    • (1991) IEEE Electron Dev. Lett , vol.12 , pp. 524-526
    • Trew, R.J.1    Mishra, U.K.2
  • 6
    • 0028448618 scopus 로고
    • Principles of Large-Signal MESFET Operation
    • June
    • Winslow, T.A. and Trew, R.J., "Principles of Large-Signal MESFET Operation," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 935-942, June 1994.
    • (1994) IEEE Trans. Microwave Theory Tech , vol.42 , pp. 935-942
    • Winslow, T.A.1    Trew, R.J.2
  • 9
    • 0035717718 scopus 로고    scopus 로고
    • Wide Bandgap Semiconductor Devices and MMICs for RF Power Applications
    • Dec
    • Palmour, J.W., et. al., "Wide Bandgap Semiconductor Devices and MMICs for RF Power Applications," IEDM Tech. Digest, pp. 385-388, Dec. 2001.
    • (2001) IEDM Tech. Digest , pp. 385-388
    • Palmour, J.W.1    et., al.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.