Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Chen, Z ^a   Pei, Y ^a   Newman, S ^a   Chu, R ^a   Brown, D ^a   Chung, R ^a   Keller, S ^a   Denbaars, S P ^a   Nakamura, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTODEGRADATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

4H-SIC SUBSTRATES; ALGAN; ALGAN LAYERS; ALGAN/GAN HETEROJUNCTIONS; ALGAN/GAN HETEROSTRUCTURE; ALN BUFFERS; ATOMIC FORCES; CRYSTAL QUALITIES; DRAIN BIAS; GAN BUFFERS; GAN LAYERS; LOW LEAKAGES; PINCH OFFS; POWER ADDED EFFICIENCIES; POWER DENSITIES; ROOM TEMPERATURE MOBILITIES; SECONDARY ION MASS SPECTROSCOPIES; SEMI-INSULATING; SEMI-INSULATING GAN; X- RAY DIFFRACTIONS;

GALLIUM ALLOYS;

EID: 63049098856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103210     Document Type: Article

References (13)

1. H. Tang, J. B. Webb, J. A. Bardwell, S. Raymond, J. Salzman, and C. Uzan-Saguy, Appl. Phys. Lett. 0003-6951 10.1063/1.1345816 78, 757 (2001).
2. J. B. Webb, H. Tang, S. Rolfe, and J. A. Bardwell, Appl. Phys. Lett. 0003-6951 10.1063/1.124252 75, 953 (1999).
3. D. S. Green, U. K. Mishra, and J. S. Speck, J. Appl. Phys. 0021-8979 10.1063/1.1755431 95, 8456 (2004).
4. C. Poblenz, P. Waltereit, S. Rajan, U. K. Mishra, J. S. Speck, P. Chin, I. Smorchkova, and B. Heying, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1943443 23, 1562 (2005).
5. P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Appl. Phys. Lett. 0003-6951 10.1063/1.1418452 79, 3527 (2001).
6. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 0003-6951 10.1063/1.1490396 81, 439 (2002).
7. Y. Pei, R. Chu, N. A. Fichtenbaum, Z. Chen, D. Brown, L. Shen, S. Keller, S. P. DenBaars, and U. K. Mishra, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.46.L1087 46, L1087 (2007).
8. A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg, and M. Fatemi, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2003.08.024 260, 54 (2004).
9. J. Lee, M. Lee, S. Hahm, Y. Lee, J. Lee, Y. Bae, and H. Cho, MRS Internet J. Nitride Semicond. Res. 8, 5 (2003).
10. D. C. Look, D. C. Reynolds, R. L. Jones, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, and H. Morkoc, Mater. Sci. Eng., B 0921-5107 10.1016/S0921- 5107(96)01803-X 44, 423 (1997).
11. W. Liu and A. A. Balandin, J. Appl. Phys. 0021-8979 10.1063/1.1868876 97, 073710 (2005).
12. G. Parish, S. Keller, S. P. Denbaars, and U. K. Mishra, J. Electron. Mater. 29, 15 (2000).
13. D. D. Koleske, A. E. Wickenden, R. L. Henry, and M. E. Twigg, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(02)01348-9 242, 55 (2002).