Mechanisms for electrical degradation of GaN high-electron mobility transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Jungwoo, Joh ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DEGRADATION; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; SULFATE MINERALS;

CRITICAL ELECTRIC FIELDS; DEFECT FORMATION; DEVICE DEGRADATION; ELECTRICAL DEGRADATIONS; ELECTRICAL RELIABILITY; ELECTRON TRAPPING; GAN HEMTS; HIGH ELECTRIC FIELDS; LATTICE DEFECTS; MAXIMUM DRAIN CURRENT; PIEZO-ELECTRIC EFFECTS; SHEET CARRIER CONCENTRATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 46049094023     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346799     Document Type: Conference Paper

References (9)

1. A. Sozza et al., "Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress," IEEE IEDM Tech. Digest, pp. 590-593, 2005.
2. H. Kim et al., "Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation," Electron Device Lett., vol. 24, pp. 421-423, 2003.
3. T. Kunii et al., "A high reliability GaN HEMT with SIN passivation by Cat-CVD," IEEE CSIC Digest, pp. 197-200, 2004.
4. C. Wen, "Proposed GaN HFET current collapse mechanism," IEEE APMC Proc., 2005.
5. K. Boutros, P. Rowell, and B. Brar, "A study of output power stability of GaN HEMTs on SiC substrates," IEEE IRPS proc., pp. 577-578, 2004
6. M. Somerville and J. del Alamo, "A Model for Tunneling-Limited Breakdown in High-Power HEMTs," IEEE IEDM Tech. Digest, pp. 35-38, 1996.
7. C. Lee et al., "Effects of AlGaN/GaN HEMT structure on RF reliability," Electron. Lett., pp. 155-157, 2005.
8. D. Gotthold et al., "Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide," J. Electronic Materials, vol. 33, pp. 408-411, 2004.
9. P. Valizadeh and D. Pavlidis, "Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs," IEEE Trans. Electron Devices, vol. 52, pp. 1933-1939, 2005.