Degradation-mode analysis for highly reliable GaN-HEMT

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 639-642

  Inoue, Y ^a   Masuda, S ^a   Kanamura, M ^a   Ohki, T ^a   Makiyama, K ^a   Okamoto, N ^a   Imanishi, K ^a   Kikkawa, T ^a   Hara, N ^a   Shigematsu, H ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GALLIUM NITRIDE; LEAKAGE CURRENTS; RELIABILITY ANALYSIS; THERMAL EFFECTS;

DEGRADATION MODE; DEVICE RELIABILITY; GATE LEAKAGE CURRENT FACTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748867887     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.379982     Document Type: Conference Paper

References (5)

1. Hyungtak Kim, Vinayak Tilak, Bruce M. Green, Hoyoung Cha, Joseph A. Smart, James R Shealy, and Lester F. Eastman, "Degradation Characteristics of AlGaN-GaN-HEMT High Electron Mobility Transistors. ", 2001 Annual International Reliability Physics Symposium, pp214-217.
2. D.C.Dumka, C. Lee, H.Q. Tserng and P. Saunier, "'RF reliability performance of AlGaN/GaN-HEMTs on Si substrate at 10 GHz. ", 2004 IEEE ELECTRON LETTERS, vol. 40, no. 24.
3. T. Kikkawa, "Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier," Japanese J. Appl. Phys., vol. 44, pp. 4896-4901, 2005.
4. T. Kikkawa, M. Nagahara, T. Kimura, S. Yokokawa, S. Kato, M. Yokoyama, Y. Tateno, K. Horino, K. Domen, Y. Yamaguchi, N. Hara, K. Joshin, "A 36 W CW AlGaN/GaN-power HEMT using surface-chargecontrolled structure. ", Mcrowave Symposium Digest, 2002, pp 1815-1818.
5. T. Kikkawa, K. Imanishi, M. Kanamura, K. Joshin, "Recent Progress of Highly Reliable GaN-HEMT for Mass Production," 2006 CS-MANTECH Technical Digest., pp.171-174, 2006.