Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

Superlattices and Microstructures

Volumn 34, Issue 1-2, 2003, Pages 33-53

  Mitrofanov, Oleg ^a   Manfra, Michael ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CORRELATION METHODS; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS;

CHARGE TRAPPING; ELECTRON MOBILITY TRANSISTORS; GATE LAGS; MATERIAL DEFECTS;

TRANSISTORS;

EID: 10844255004     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2003.12.002     Document Type: Conference Paper

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