Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

Applied Physics Letters

Volumn 88, Issue 10, 2006, Pages

  Sarua, A ^a   Ji, Hangfeng ^a   Kuball, M ^a   Uren, M J ^b   Martin, T ^b   Nash, K J ^b   Hilton, K P ^b   Balmer, R S ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; SILICON CARBIDE; TRANSISTORS;

ELECTRIC FIELD COMPONENTS; FINITE ELEMENT SIMULATIONS; SIC SUBSTRATE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33644894761     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2182011     Document Type: Article

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