Strain induced buffer layer defects in GaN HFETs and their evolution during reliability testing

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 718-721

  Li, Yinsin ^a   Krishnan, M ^a   Salemi, S ^a   Paradee, G ^a   Christou, A ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Compound semiconductors; Heterojunction degradation; Nitrides; Trapping mechanisms

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; COMPOUND SEMICONDUCTORS; HETEROJUNCTION TRANSISTORS; RELIABILITY TESTING; SUBSTRATE INTERFACE; TRAP DENSITY; TRAPPING MECHANISMS;

BUFFER LAYERS; DEGRADATION; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH;

HETEROJUNCTIONS;

EID: 70449100709     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173336     Document Type: Conference Paper

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