Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1370-1374

  Tazzoli, A ^a   Meneghesso, G ^a   Zanon, F ^a   Danesin, F ^a   Zanoni, E ^a   Bove, P ^b   Langer, R ^b   Thorpe, J ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b Picogiga International   (France)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTRON MOBILITY; FAILURE ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; QUALITY ASSURANCE; RELIABILITY ANALYSIS; SAFETY FACTOR; SENSITIVITY ANALYSIS; SILICON CARBIDE; SUBSTRATES;

COMPOSITE SUBSTRATES; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERIZATIONS; EMISSION MICROSCOPES; GATE-DRAIN; HIGH ELECTRIC FIELDS;

RELIABILITY;

EID: 50249088754     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.031     Document Type: Article

References (12)

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