Temperature and voltage dependent RF degradation study in ALGaN/GaN HEMTS

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 568-569

  Coffie, R ^a   Chen, Y ^a   Smorchkova, I P ^a   Heying, B ^a   Gambin, V ^a   Sutton, W ^a   Chou, Y C ^a   Luo, W B ^a   Wojtowicz, M ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

GaN; Reaction diffusion; RF degradation

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DEGRADATION; DIFFUSION; GALLIUM NITRIDE; MATHEMATICAL MODELS; MOSFET DEVICES; PARAMETER ESTIMATION; VOLTAGE CONTROL;

REACTION-DIFFUSION; RF DEGRADATION; TRAP GENERATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34548789599     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369954     Document Type: Conference Paper

References (2)

1. R. Vetury, et al., "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, 2001, pp. 560 - 566.
2. H. Kufluoglu, et al., "Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 5, 2006, pp. 1120-1130.