Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 103-106

  Riedel, Gernot J ^a   Pomeroy, James W ^a   Hilton, Keith P ^b   Maclean, Jessica O ^b   Wallis, David J ^b   Uren, Michael J ^b   Martin, Trevor ^b   Forsberg, Urban ^c   Lundskog, Anders ^c   Kakanakova Georgieva, Anelia ^c   Pozina, Galia ^c   Janzén, Erik ^c   Lossy, Richard ^d   Pazirandeh, Reza ^d   Brunner, Frank ^d   Würfl, Joachim ^d   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c LINKÖPING UNIVERSITY   (Sweden)

^d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

CVD; Epitaxial layers; FETs; Gallium compounds; MODFETs; Resistance heating

Indexed keywords

BREEDER REACTORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HEATING; MESFET DEVICES; NUCLEATION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; REMOTE SENSING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMOELECTRIC EQUIPMENT;

ALGAN/GAN; ALGAN/GAN HEMTS; ALN; BOUNDARY RESISTANCES; CHANNEL TEMPERATURES; CVD; DEVICE LIFETIMES; ELECTRONIC DEVICES; FETS; HETERO EPITAXIES; HIGH QUALITIES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; MODFETS; NEW OPPORTUNITIES; NUCLEATION LAYERS; OPERATING TEMPERATURES; RESISTANCE HEATING; SIC SUBSTRATES; THERMAL RESISTANCES; TIME-RESOLVED;

EPITAXIAL LAYERS;

EID: 59649099424     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010340     Document Type: Article

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