Impact of AlN interalayer on reliability of AlGaN/GaN HEMTs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 99-102

  Coffie, R ^a   Chen, Y C ^a   Smorchkova, I ^a   Wojtowicz, M ^a   Chou, Y C ^a   Heying, B ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Aluminum compounds; Gallium compounds; Reliability; Semiconductor devices

Indexed keywords

DEGRADATION MECHANISM; GATE LEAKAGE; INTERLAYERS;

ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELIABILITY THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; THIN FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34250730806     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251198     Document Type: Conference Paper

References (11)

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