Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters

Volumn 80, Issue 9, 2002, Pages 1661-1663

  Luo, B ^a   Johnson, J W ^a   Kim, J ^a   Mehandru, R M ^a   Ren, F ^a   Gila, B P ^a   Onstine, A H ^a   Abernathy, C R ^a   Pearton, S J ^a   Baca, A G ^b   Briggs, R D ^b   Shul, R J ^b   Monier, C ^b   Han, J ^c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; DEVICE STABILITY; DRAIN CONTACTS; GATE LAG EFFECT; LOW TEMPERATURES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SURFACE STATE; SURFACE TRAP;

DRAIN CURRENT; GALLIUM NITRIDE; PASSIVATION; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955997504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1455692     Document Type: Article

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